کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117563 | 1461364 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mg thermal diffusion behavior on the band modulation of MgxZn1-xO/ZnO metal-semiconductor-metal photodetectors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
By magnesium (Mg) atom diffusion in ZnO layer, the detection band of MgxZn1-xO/ZnO metal-semiconductor-metal photodetectors (MSM-PDs) could be modulated from two distinct bands to one band. ZnO and MgxZn1-xO layers were deposited consecutively on a sapphire substrate using an radio-frequency magnetron sputtering system. With increasing annealed temperature, Mg atoms diffuse from MgxZn1-xO into the underlying ZnO layer, which tunes the composition of ZnO into MgyZn1-yO and thus modulate the detection band of MSM-PDs. For the annealed temperature below 900â¯Â°C, two distinct bands were detected in the MSM-PDs with wavelength region of 280-330â¯nm and 360-400â¯nm due to the absorption of MgxZn1-xO and underlying ZnO layers. Further increasing the annealed temperature to 900â¯Â°C, the deeply diffusing Mg atom causes the MgxZn1-xO and ZnO layers were homogenized into a uniform MgzZn1-zO layer, hence the detection band was transformed into one band with a wavelength region of 280-340â¯nm. Secondary ion mass spectrometry depth profile showed the Mg atom diffusing downwards with increasing annealed temperature, causing the Mg content to decrease from ~ 30% in the as deposited MgxZn1-xO to ~ 8% in the homogenized MgzZn1-zO layer. Photoluminescence demonstrated the as-deposited MgxZn1-xO/ZnO bi-layer having two distinct emission peaks around 340 and 400â¯nm, and the MgxZn1-xO and ZnO layers were homogenized into a MgzZn1-zO layer in 900â¯Â°C and hence only one emission peak (355â¯nm).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 83, 15 August 2018, Pages 18-21
Journal: Materials Science in Semiconductor Processing - Volume 83, 15 August 2018, Pages 18-21
نویسندگان
J.D. Hwang, J.S. Lin, S.B. Hwang,