کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7118082 | 1461372 | 2018 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Heterojuncted non-metal binary composites silicon carbide/g-C3N4 with enhanced photocatalytic performance
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Novel visible-light-driven silicon carbide (SiC)/g-C3N4 heterojuncted composites were successfully prepared via a facile ultrasonic dispersion and calcination method, and afterwards characterized by a couple of technologies including XRD, SEM, TEM, FT-IR, XPS, UV-vis DRS, PL spectra, and N2 adsorption-desorption. It was found that SiC nanoparticles were uniformly deposited over the surface of g-C3N4 to create heterojunction domains along phase interface boundary, favoring charge carriers transfer and separation across the straddling band alignments. Besides, the visible-light absorption capability of samples was enhanced by the incorporation of SiC. These physiochemical merits ensured the improved photocatalytic performance of heterojuncted composites over the degradation of dyes rhodamine B (RhB) and methyl orange (MO) in comparison to each single component SiC or g-C3N4. Upon an identical condition, the sample SN8 exhibited the highest photocatalytic ability among all tested samples. According to active species trapping measurements, âOH and âO2- were deemed as major radicals and eventually a possible photocatalysis mechanism was speculated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 75, 1 March 2018, Pages 183-192
Journal: Materials Science in Semiconductor Processing - Volume 75, 1 March 2018, Pages 183-192
نویسندگان
Fei Chang, Jiaojiao Zheng, Xiaofang Wang, Quan Xu, Baoqing Deng, Xuefeng Hu, Xiaoqi Liu,