کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7118174 | 1461373 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An effect of temperature on structural, optical, photoluminescence and electrical properties of copper oxide thin films deposited by nebulizer spray pyrolysis technique
ترجمه فارسی عنوان
اثر دما بر روی خواص ساختاری، اپتیکی، فوتولومینسانس و خواص الکتریکی ورق های نازک مس، رسوب شده توسط روش اسپری نیکلایزر پیرولیز
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
چکیده انگلیسی
In this work, copper oxide thin films were deposited on glass substrate by nebulizer spray pyrolysis technique with different temperatures (i.e. 250-320 °C). All the deposited films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), Laser Raman, UV-Vis, Photoluminescence and Hall Effect measurements for the Structural, morphological, vibrational, optical and electrical properties. The XRD studies confirmed that the films deposited with different temperatures from 250 to 300 °C possess single cubic crystal structure phase of cuprous oxide (Cu2O) whereas the films deposited at 310 and 320 °C were found to have a mixed phase of CuO and Cu2O. When the temperature reaches above 310 °C the Cu2O phase become unstable and started to convert as CuO. Laser Raman studies confirmed that the observed peaks at 109, 148, 219, 416,515 and 635 cmâ1 are belong to Cu2O phase deposited at 250 and 280 °C. However, the films deposited at 310 °C and 320 °C having additional peaks at 273, 327 and 619 cmâ1 which conforms the presence of mixed (CuO and Cu2O) phase. The AFM studies shows that the deposited films has uniformly distributed with homogeneity and the particles extended all over the surface. Optical measurement showed that the band gap of deposited thin films in the range of 2.44-1.97 for 250-320 °C, respectively. A single and strong emission peak at ~ 617 nm is observed in PL spectra, which conforms the copper oxide film. Hall Effect measurements showed that all the films are of p-type conductivity with resistivity (Ï) of 4.61 à 102 Ω cm, carrier concentration (n) of 13.53 à 1015 cmâ3 and mobility of 1.0 cm2/vs at 320 °C temperature. The low activation energy of 0.012 eV were observed for the film deposited at 320 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 74, February 2018, Pages 129-135
Journal: Materials Science in Semiconductor Processing - Volume 74, February 2018, Pages 129-135
نویسندگان
R. David Prabu, S. Valanarasu, V. Ganesh, Mohd Shkir, S. AlFaify, A. Kathalingam, S.R. Srikumar, R. Chandramohan,