کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7118271 | 1461391 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhancing current density of perovskite solar cells using TiO2-ZrO2 composite scaffold layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Enhancing current density of perovskite solar cells using TiO2-ZrO2 composite scaffold layer Enhancing current density of perovskite solar cells using TiO2-ZrO2 composite scaffold layer](/preview/png/7118271.png)
چکیده انگلیسی
A novel scaffold layer composed of TiO2-ZrO2 composite was fabricated for perovskite solar cell. Compared with pure TiO2 nanoparticles (NPs), the relatively larger ZrO2 NPs could increase film roughness and enhance light-scattering effect in TiO2-ZrO2 composite films. The device exhibited outstanding power conversion efficiency (PCE) of 11.41%. The morphology and aggregation of particles, three-dimensional roughness, as well as the ingredient and micro-structure of FTO/compact TiO2/TiO2-ZrO2 was investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscope (AFM), energy dispersive spectrometer (EDS), and X-ray diffraction (XRD), respectively. Moreover, the optical property of TiO2-ZrO2 films for visible light was characterized by UV-visible absorption spectroscopy (UV-vis), and its influence on quantum yield of the device was further demonstrated by incident photon-to-electron conversion efficiency (IPCE). Owing to the inert oxide, the short-circuit current density of perovskite solar cell using TiO2-ZrO2 composition as scaffold layer increased by 21% compared to the one employing pure TiO2 mesoporous film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 56, December 2016, Pages 29-36
Journal: Materials Science in Semiconductor Processing - Volume 56, December 2016, Pages 29-36
نویسندگان
M. Che, L. Zhu, Y.L. Zhao, D.S. Yao, X.Q. Gu, J. Song, Y.H. Qiang,