کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7118440 | 1461391 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A systematic study of the impact of etching time to the sensitivity of SiNW sensor fabricated by MACEtch process
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A systematic study of the impact of etching time to the sensitivity of SiNW sensor fabricated by MACEtch process A systematic study of the impact of etching time to the sensitivity of SiNW sensor fabricated by MACEtch process](/preview/png/7118440.png)
چکیده انگلیسی
In this paper, silicon nanowires (SiNWs) was fabricated by a combination of metal-assisted chemical etching (MACEtch) and nanosphere lithography. We get the silicon nanowires with different specific surface area by changing the etching time. The microscopic structure of the silicon nanowires is observed by field emission scanning electron microscope (FESEM). The gas sensing performances of the SiNWs with different specific surface area have been systematically examined by measuring the resistance change towards the concentrations of NO2 in the range of 1-5Â ppm at room temperature (RT, 300Â K), the gas sensor composed of SiNWs showed perfect gas sensitive property and possessed a short response-recovery time. The main reason of these excellent attributes is quite likely that high specific surface area of the SiNWs, and NO2 sensing mechanism of the SiNWs was also further explained, which can be attributed to the oxygen in the air and detected NO2 extract electrons from the surface of the SiNWs, and the resistivity of SiNWs changed with the changing of space-charge layer under the of SiNWs surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 56, December 2016, Pages 307-312
Journal: Materials Science in Semiconductor Processing - Volume 56, December 2016, Pages 307-312
نویسندگان
Yifei Wang, Ming Hu, Zishuai Wang, Xiangcheng Liu, Lin Yuan,