کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7118754 | 1461407 | 2015 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Stability and morphology-dependence of Sc3+ ions incorporation and substitution kinetics within ZnO host lattice
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Stability and morphology-dependence of Sc3+ ions incorporation and substitution kinetics within ZnO host lattice Stability and morphology-dependence of Sc3+ ions incorporation and substitution kinetics within ZnO host lattice](/preview/png/7118754.png)
چکیده انگلیسی
In this study, sol-gel spin coating route was carried out to prepare Scandium doped ZnO thin films with different controlled percentage (1-7%). Particularly, it has been demonstrated, through original conjoint morphological-structural and optical investigations, that some interesting physical properties were induced. Indeed, X-ray diffraction (XRD) analysis shows that (002) preferential crystalline plane for Sc doped ZnO films was kept along with ZnO hexagonal würtzite structure, although Sc doping seemed to cause a decrease in crystallinity. Except for 1 at% Sc doping ratio, optical band gap changes reversely with Urbach energy with a decrease in optical gap and a broadening of the absorption tail. Ab-initio calculations of lattice dynamical properties outlined additional strong hybridization between Sc and O atoms and show the stability of Scandium doped ZnO.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 39, November 2015, Pages 103-111
Journal: Materials Science in Semiconductor Processing - Volume 39, November 2015, Pages 103-111
نویسندگان
AyÅe Yumak, Güven Turgut, Olfa Kamoun, Haci Ozisik, Engin Deligoz, Petya Petkova, Refka Mimouni, Karem Boubaker, Mosbah Amlouk, Souraya Goumri-Said,