The effects of thermal annealing on the electrical characteristics of Au/n-InP/In diode

An Au/n-InP/In diode has been fabricated in the laboratory conditions and the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diode have been measured in room temperature. In order to observe the effect of the thermal annealing, this diode has been annealed at temperatures 100 and 200 °C for 3 min in N2 atmosphere. The characteristic parameters such as leakage current, barrier height and ideality factor of this diode have been calculated from the forward bias I-V and reverse bias C-V characteristics as a function of annealing temperature. Also the rectifying ratio of the diode is evaluated for as-deposited and annealed diode.