Synthesis of wurtzite GaN thin film via spin coating method

In this research, hexagonal wurtzite structure gallium nitride (GaN) thin film was grown on silicon (Si) substrate by using spin coating deposition method. Simple ethanol-based precursor with the addition of diethanolamine solution was used. High resolution X-ray diffraction results revealed that wurtzite structure GaN thin film with (002) preferred orientation was deposited on Si substrate. Flied-emission scanning electron microscopy and atomic force microscopy results showed that crack free GaN thin film with uniform and dense grains of GaN was formed. Finally, lattice vibrational characterization by p-polarized infrared reflectance technique revealed a strong reststrahlen feature of crystalline wurtzite GaN, and the transverse and longitudinal phonon modes of wurtzite GaN were clearly identified.