کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7150210 | 1462186 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors](/preview/png/7150210.png)
چکیده انگلیسی
We propose a specialized gate-drain separation structure for use in investigation of the dynamic behavior of the thermal transport characteristics in AlGaN/AlN/GaN heterojunction transistors. Using this structure, the influence of the two-dimensional electron gas (2DEG) on the horizontal heat transfer in these transistors was identified experimentally. A temperature delay (i.e., the difference in temperature at the same time) of 1.3â¯Â°C, which accounts for 8.6% of the total temperature rise, was calculated to be caused by a 0.3â¯Î¼mâ¯Ãâ¯150â¯Î¼m 2DEG depleted region. In addition, the temperature transients show that the 2DEG can accelerate the temperature to the steady state. Infrared measurements were also carried out to benchmark the results. In particular, the sample structure allows the measurement of a complete thermal process that includes both heating and cooling without interruption. Based on a comparison of the two processes, we demonstrated and corrected an error in the temperature rise that occurred when the Schottky junction voltage was used as the temperature-sensitive parameter.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 147, September 2018, Pages 35-38
Journal: Solid-State Electronics - Volume 147, September 2018, Pages 35-38
نویسندگان
Xiang Zheng, Shiwei Feng, Yamin Zhang, Yunpeng Jia,