کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7150450 | 1462192 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0â¯V with good uniformity, extremely small hysteresis of â¼20â¯mV, and maximum drain current of 210â¯mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of â¼800â¯V with off-state leakage current as low as â¼10â12â¯A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 141, March 2018, Pages 7-12
Journal: Solid-State Electronics - Volume 141, March 2018, Pages 7-12
نویسندگان
Dong-Hyeok Son, Young-Woo Jo, Chul-Ho Won, Jun-Hyeok Lee, Jae Hwa Seo, Sang-Heung Lee, Jong-Won Lim, Ji Heon Kim, In Man Kang, Sorin Cristoloveanu, Jung-Hee Lee,