کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7150774 | 1462216 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation](/preview/png/7150774.png)
چکیده انگلیسی
Random Telegraph Noise (RTN) has been studied in Ultra-Thin Fully-Depleted Silicon-On-Insulator transistors. A modified Time Lag Plot algorithm has been used to identify devices with a single active trap. The physical characteristics of the trap have been extracted based on Shockley-Read-Hall models, revealing the possible trends of capture and emission times of the trap according to its physical and energetic position. The effect of the temperature on the characteristic times has been studied in the range from 248 to 323Â K validating the results obtained at room temperature. Finally, the impact of back-bias on the RTN fluctuation has been modelled through the Lim-Fossum interface coupling relationships, allowing to predict accurately the experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 117, March 2016, Pages 60-65
Journal: Solid-State Electronics - Volume 117, March 2016, Pages 60-65
نویسندگان
Carlos Marquez, Noel Rodriguez, Francisco Gamiz, Rafael Ruiz, Akiko Ohata,