Analysis and optimisation of lateral thin-film silicon-on-insulator (SOI) PMOS transistor with an NBL layer in the drift region

► Low RESURF effectiveness found in conventional P-channel LDMOS on thin-SOI. ► NBL layer is inserted in the drift region by high energy implantation. ► Significant improvement of static performance in the proposed LDPMOS. ► Further improvement is observed by using STI partially covering the drift region.