کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7151256 | 1462265 | 2011 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The influence of rapid thermal annealing (RTA) and millisecond annealing (MSA) peak temperature fluctuations, due to pattern effects, on Schottky contact resistances and the electrical properties of 6-T SRAM cells is studied in this work. TCAD simulations of 32Â nm gate length single gate fully depleted silicon on insulator MOSFETs were carried out. The contact regions of the n+/p+ layers of a 6-T SRAM cell layout were separately handled in 3D TCAD simulations to calculate the dependence of contact resistances on RTA and MSA peak temperatures. Compact models of the 32Â nm gate length transistors were extracted and used in circuit simulations. Finally, the impact of RTA and MSA peak temperature fluctuations on the electrical performance of single devices and 6-T SRAM cells were studied by extended SPICE simulations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volumes 65â66, NovemberâDecember 2011, Pages 114-122
Journal: Solid-State Electronics - Volumes 65â66, NovemberâDecember 2011, Pages 114-122
نویسندگان
C. Kampen, A. Burenkov, P. Pichler, J. Lorenz,