کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
726544 892625 2016 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Evaporated iron disulfide thin films with sulfurated annealing treatments
ترجمه فارسی عنوان
تارهای نازک آهن دی اکسید آهن را با روشهای خنثی سازی سولفوره شده تبخیر می کند
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی

FeS2 thin films were grown on a glass substrate using a physical vapor deposition technique at room temperature. Subsequently, the thin films were annealed in two different atmospheres: vacuum and vacuum-sulfur. In the vacuum-sulfur atmosphere a graphite box was used as sulfur container and the films were sulfurated successfully at 200–350 ºC. It was found that annealing in a vacuum-sulfur atmosphere was indispensable in order to obtain polycrystalline FeS2 thin films. The polycrystalline nature and pure phase were determined by XRD and Raman techniques and the electrical properties by the Hall effect. Using the sulfurating technique, the n-type semiconductor was prepared at 200–350 °C and a p-type at 500 °C. The carrier concentrations were between 1.19×1020 and 2.1×1020 cm−3. The mobility was 9.96–5.25 cm2 V−1 s−1 and the resistivity was 6.31×10−2 to 1.089×10−2 Ω cm. The results obtained from EDS showed that the films prepared in the vacuum-sulfur atmosphere were close to stoichiometric and that the indirect band gap varied between 1.03 and 0.945 eV.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 42, Part 3, February 2016, Pages 383–389
نویسندگان
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