The electron transport properties in a three-barrier structure based on monolayer graphene

Using the transfer matrix method, we theoretically investigate the electron transport properties in a three-barrier structure based on monolayer graphene. The numerical results show that the transmission probability and the conductance strongly depend on the barrier height, the barrier width and the incident energy as well as the incident angle of carriers. Therefore, by changing the configuration of the structure, the electron transport properties can be adjusted to be suitable for the practical application in various graphene-based electronic devices such as the graphene-based transistor with the high on/off ratio and the direction-dependent wave vector filter.