کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
727046 | 1461436 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Junction temperature and reliability of high-power flip-chip light emitting diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Junction temperature and reliability of high-power flip-chip light emitting diodes Junction temperature and reliability of high-power flip-chip light emitting diodes](/preview/png/727046.png)
چکیده انگلیسی
In this work, infrared micro-imaging, emission microscope measurements are performed on the chip surface of flip-chip light emitting diodes (FCLEDs). The temperature deviation on the chip surface increases from 19 to 146 °C when the injection current changes from 20 to 2000 mA. When the structure of FCLED is optimized, the temperature deviation becomes smaller. And the thermal resistance is achieved to as low as 10.4 °C/W. The finite element method calculation based on the model of steady-state current field and temperature field is carried out to investigate the effects of current spreading on thermal performance of FCLED.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 10, Issues 4–5, August–October 2007, Pages 206–210
Journal: Materials Science in Semiconductor Processing - Volume 10, Issues 4–5, August–October 2007, Pages 206–210
نویسندگان
Z.Z. Chen, P. Liu, S.L. Qi, L. Lin, H.P. Pan, Z.X. Qin, T.J. Yu, Z.K. He, G.Y. Zhang,