Interaction of ion-implantation-induced interstitials in B-doped SiGe

B-doped Si0.77Ge0.23 of various surface-doping levels was used to investigate the evolution of implant damage and the corresponding transient enhanced diffusion of boron as a function of boron concentration. These layers were implanted with a non-amorphizing 60 keV, 1×1014 cm−2 Si, and annealed at 750 °C. Plan-view transmission electron microscopy (PTEM) confirmed the formation and dissolution of dislocation loops. Transient enhanced diffusion (TED) is evident in the surface doped SiGe, but the low diffusivity of interstitials in Si0.77Ge0.23 and the presence of interstitial traps inhibited TED at the deeper B marker layer.