کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
727844 1461398 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Device characteristics of amorphous indium-gallium-zinc-oxide channel capped with silicon oxide passivation layers
ترجمه فارسی عنوان
ویژگی های دستگاه کانال آمینو اسید گلیکول-گالیم-روی-اکسید با پوشش سیلیکون اکسید لایه گذار
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی

It was investigated how the amorphous indium-gallium-zinc-oxide (a-IGZO) channel of a back-gate of thin film transistor (TFT) is affected by the deposition of silicon oxide layers on their top surfaces by radio frequency magnetron sputtering. Preliminary investigations showed that the deposition of silicon oxide layer caused damages to the surfaces of pristine silicon wafers resulting in substantial roughening. However, bombardments by the energetic particles involved in the sputtering process seem to have played beneficial roles in that the a-IGZO channel TFTs showed improved performances in respect of the carrier density, field effect mobility, and on-off current ratio. Such improvements are attributed to the modification of the a-IGZO channel to decrease the concentration of oxygen vacancy sites and/or to average the oxygen vacancy sites thereby increasing the carrier concentrations and decreasing the density of trap sites, as revealed in the negative shift of the threshold voltage. On the other hand, such channel modification by the passivation process resulted in the slight increase in the subthreshold swing. It is suggested that the a-IGZO channel TFTs can be passivated by simple sputtering process without etch stop layer since the process rather improved the device performances despite some damages to the passivated surfaces.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 49, July 2016, Pages 34–39
نویسندگان
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