کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
727881 | 1461409 | 2015 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of self-organized nano-surfaces on III–V semiconductors by low energy oxygen ion bombardment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Pattern formation on surfaces of III–V compound semiconductors GaAs, GaSb, and InSb by O2+ ion sputtering was studied. For GaAs, a ripple pattern was observed under a 2-keV primary beam energy for two ion fluences, i.e., 3.1×1018 ions/cm2 and 5.4×1018 ions/cm2. The pattern wavelengths were 175 nm and 200.2 nm. A bubble-like structure was observed on the GaSb surface bombarded with 1-keV and 2-keV oxygen ions. In the case of InSb, several pyramidal structures with sub-micrometer dimensions were observed when the ion energy was 1 keV. When the ion energy was increased to 2 keV, the pyramidal structures acquired micrometer dimensions and a ripple pattern with a wavelength of 246 nm was observed in the surrounding area.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 37, September 2015, Pages 190–198
Journal: Materials Science in Semiconductor Processing - Volume 37, September 2015, Pages 190–198
نویسندگان
A.G. Hernández, Yu. Kudriavtsev, S. Gallardo, M. Avendaño, R. Asomoza,