کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
727942 1461404 2016 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of hyperthermal annealing on LPCVD silicon nitride
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Effect of hyperthermal annealing on LPCVD silicon nitride
چکیده انگلیسی

The objective of this paper is to understand the effects of 1100 °C annealing on film thickness, refractive index and especially residual stress of low-pressure chemical vapor deposition (LPCVD) silicon nitride films. The annealing effect on Young's modulus of silicon nitride films is also discussed. For these purposes, a number of 1100 °C furnace annealing processes in N2 atmosphere were carried out. With the increase of annealing time, film thickness decreases exponentially and correspondingly the refractive index increases. Both film thickness and refractive index reach a stable value after several times annealing. Due to the film densification and viscous flow, residual stress of Si–Si3N4Si–Si3N4 system increases in the first 10 min annealing treatment and then decreases in the following annealing processes. Based on the Maxwell viscoelastic model, an improved model which considers film densification and viscous flow simultaneously is built to explain the effect of annealing process on residual stress.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 43, 1 March 2016, Pages 222–229
نویسندگان
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