کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
727999 | 1461393 | 2016 | 9 صفحه PDF | دانلود رایگان |

In order to comparatively study the growth and characterization of silicon oxide films on Si-based substrates, top-cut solar grade silicon (SOG-Si) containing Si3N4 rods and SiC lumps were used as raw materials and respectively heated at 1773 K and 1873 K under Ar gas. The samples were investigated by Focus Ion Beam/Scanning Electron Microscope (FIB/SEM) and Energy Dispersive Spectroscopy (EDS). Results indicated that silicon oxides with different morphologies successfully grew on the substrates via various mechanisms. Passive oxidation was evident in the formation of a dense SiO2 surface layer on the base material at 1773 K, while active oxidation was evident in the formation of SiO2 with particle, rod, and nanowire-like morphologies, which was the re-oxidation product of SiO at 1873 K under the active-to-passive transition. Si, SiC, and Si3N4 have the similar oxidation tendency to form silicon oxides under either passive or active regimes.
Journal: Materials Science in Semiconductor Processing - Volume 54, 1 November 2016, Pages 20–28