کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
728440 | 1461419 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Galvanic corrosion characteristics of poly silicon–tantalum nitride couple immersed in dilute HF solutions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Galvanic corrosion characteristics between poly-Si and tantalum nitride (TaN) in dilute HF solutions (0.1 to 1%) have been investigated. Variables such as poly-Si to TaN area ratio, dissolved oxygen concentration in HF solutions and doping level of poly-Si were investigated. Extent of galvanic corrosion was directly measured as well as estimated using Tafel polarization. Morphological changes on poly-Si due to galvanic corrosion were characterized using Scanning Electron Microscopy. Increase in exposed cathode (TaN) area as well as aeration results in higher corrosion of poly-Si. In de-oxygenated HF solutions (less than 4 ppm of O2), irrespective of the area ratio, there appears to be no significant silicon loss.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 27, November 2014, Pages 390–396
Journal: Materials Science in Semiconductor Processing - Volume 27, November 2014, Pages 390–396
نویسندگان
R. Govindarajan, M. Keswani, S. Raghavan,