کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728472 1461419 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Development of SnS quantum dot solar cells by SILAR method
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Development of SnS quantum dot solar cells by SILAR method
چکیده انگلیسی

SnS quantum dot solar cell is fabricated by Successive Ionic Layer Adsorption and Reaction (SILAR) method. SnS layer is optimized by different SILAR cycles of deposition. The particle size increased with the increase in number of SILAR cycles. Cu2S coated FTO is used as counter electrode against the conventional Platinum electrode. On comparison with a cell having a counter electrode–electrolyte combination of Platinum–Iodine, Cu2S–polysulfide combination is found to improve both the short circuit current and fill factor of the solar cell. A maximum efficiency of 0.54% is obtained with an open circuit voltage of 311 mV and short circuit current density of 4.86 mA/cm2.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 27, November 2014, Pages 649–653
نویسندگان
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