کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
728591 | 892844 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
GaN-based LEDs with Ar plasma treatment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The authors propose a simple Ar plasma treatment method to selectively damage the area underneath p-pad electrode of GaN-based light-emitting diodes (LEDs). It was found that we could form a highly resistive area so that the injected carriers will be forced to spread out horizontally for the LED. Under 20 mA current injection, it was found that the output powers were 16.0, 17.9 and 17.3 mW while the forward voltages were 3.17, 3.19 and 3.20 V for conventional LED and LED with SiO2 layer, respectively. Moreover, the LED with Ar plasma treatment is superior to the other LEDs while operating at a higher injection current.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 15, Issue 1, February 2012, Pages 52–55
Journal: Materials Science in Semiconductor Processing - Volume 15, Issue 1, February 2012, Pages 52–55
نویسندگان
D.S. Kuo, K.T. Lam, K.H. Wen, S.J. Chang, T.K. Ko, S.J. Hon,