کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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728662 | 1461420 | 2014 | 6 صفحه PDF | دانلود رایگان |

0.25 μm CdxZn1−xS thin films were deposited on Si and glass substrates by using a chemical Spray Pyrolysis technique (CSP). Measurements of the absorption spectrum of the film were carried out. The values of band gaps (Eg) are calculated from the absorption spectrum. X-ray diffraction (XRD) of the CdxZn1−xS thin films on Si and glass substrates was carried out. The full width at half-maximum (FWHM)) of diffraction peak was calculated to be about 0.640, which showed that it is a polycrystalline thin film. A CdxZn1−xS Metal–Semiconductor–Metal (MSM) photodetector with nickel (Ni) contact electrodes was then fabricated. The electrical property of the Ni/CdxZn1−xS/Si and Ni/CdxZn1−xS/glass detectors was investigated using the current–voltage (I–V) measurements. The barrier heights ϕΒ of Ni/CdxZn1−xS/Ni MSM on Si and glass substrates were 0.551 eV and 0.593 eV, respectively with an applied bias voltage of 3 V.
Journal: Materials Science in Semiconductor Processing - Volume 26, October 2014, Pages 49–54