Electrical characterization of cobalt phthalocyanine/p-silicon heterojunction

We report the fabrication of organic/inorganic heterojunction of cobalt phthalocyanine (CoPc) with p-type silicon (p-Si) using vacuum thermal evaporation. At ambient conditions, the electrical characteristics of the heterojunction are investigated. The optical band gap of CoPc is calculated from absorption spectrum using Tauc׳s law. The electrical characterization of the heterojunction shows rectifying behavior with a rectification ratio (RR) of 316. Different diode parameters are extracted from the current–voltage (I–V) curves, such as ideality factor n, barrier height ϕ, series resistance Rs and shunt resistance Rsh. These parameters are in good agreement with those calculated from the functions of Cheungs and Norde . The conduction of charge carriers through the interface of p-Si/CoPc is also studied. The fabricated heterojunction could be a promising candidate for its potential use in electronic applications.