کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728746 1461420 2014 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The texturization process during horizontal acidic etching of multi-crystalline silicon wafers
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
The texturization process during horizontal acidic etching of multi-crystalline silicon wafers
چکیده انگلیسی

Horizontal wet-chemical etching of silicon wafers in an HF/HNO3/H2SiF6 mixture is the most widely-used technique to texturize multi-crystalline silicon wafers for solar cell production. For the first time, the etch rates were determined separately for the upper and lower side during the horizontal texturization and the their different morphologies. The dependency of the surface morphology from the etch rate and etch depth is proven. Furthermore, the influence of the temperature and stirring rates on the morphological development for the upper and lower side of the wafer were examined. From temperature-dependent measurements, activation energies in the range from 17 kJ/mol to 40 kJ/mol on the upper side and from 23 kJ/mol to 40 kJ/mol on the lower side dependent from the etching time were determined. The observed results reveal a connection between the etch depth, the agitation of the etch solution, the morphology and the reflectivity of the separate wafer sides.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 26, October 2014, Pages 695–703
نویسندگان
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