Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

Current–voltage (I–V) characteristics of Au/PVA/n-Si (1 1 1) Schottky barrier diodes (SBDs) have been investigated in the temperature range 80–400 K. Here, polyvinyl alcohol (PVA) has been used as interfacial layer between metal and semiconductor layers. The zero-bias barrier height (ΦB0) and ideality factor (n) determined from the forward bias I–V characteristics were found strongly dependent on temperature. The forward bias semi-logarithmic I–V curves for different temperatures have an almost common cross-point at a certain bias voltage. The values of ΦB0 increase with the increasing temperature whereas those of n decrease. Therefore, we have attempted to draw ΦB0 vs. q/2kT   plot in order to obtain evidence of a Gaussian distribution (GD) of the barrier heights (BHs). The mean value of BH Φ¯B0 and standard deviation (σ0) were found to be 0.974 eV and 0.101 V from this plot, respectively. Thus, the slope and intercept of modified ln(I0/T2)−q2σ02/2(kT)2 vs. q/kT   plot give the values of Φ¯B0 and Richardson constant (A⁎) as 0.966 eV and 118.75 A/cm2K2, respectively, without using the temperature coefficient of the BH. This value of A* 118.75 A/cm2K2 is very close to the theoretical value of 120 A/cm2K2 for n-type Si. Hence, it has been concluded that the temperature dependence of the forward I–V characteristics of Au/PVA/n-Si (1 1 1) SBDs can be successfully explained on the basis of the Thermionic Emission (TE) theory with a GD of the BHs at Au/n-Si interface.