کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728899 892860 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Carrier lifetime limitation defects in polycrystalline silicon ribbons grown on substrate (RGS)
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Carrier lifetime limitation defects in polycrystalline silicon ribbons grown on substrate (RGS)
چکیده انگلیسی

Carrier lifetime limitation defects in polycrystalline silicon ribbons have been examined in samples with high oxygen and carbon content. Infrared spectroscopy showed that essentially all supersaturated oxygen impurities precipitated within 1 h annealing at over 800 °C. Preferential defect etching revealed that a much higher density of oxygen precipitates were generated in dislocation-free grains than in those highly dislocated (105–107 cm−2) ones. Correlated with electron-beam-induced current imaging, we found that oxygen precipitates are the dominant carrier recombination defects in dislocation-free grains, while dislocations are the lifetime killer for highly dislocated grains. It is suggested that eliminating dislocations alone will not improve the carrier lifetime, considering that a higher density of oxygen precipitates formed in the absence of dislocation-related heterogeneous nucleation sites will significantly degrade the carrier lifetime.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 11, Issue 1, February 2008, Pages 20–24
نویسندگان
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