Electrical characterization of defects introduced during electron beam deposition of Schottky contacts on n-type Ge

We have investigated by deep level transient spectroscopy the hole and electron trap defects introduced in n-type Ge during electron beam deposition (EBD) of Pt Schottky contacts. We have also compared the properties of these defects with those introduced in the same material during high-energy electron irradiation. Our results show EBD introduces several electrically active defects at and near the surface of Ge. The main defect introduced during EBD has electronic properties similar to those of the V–Sb complex, or E-center, introduced during high-energy electron irradiation of Ge. Annealing at 325 °C in Ar removed all the defects introduced during EBD.