کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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728992 | 1461438 | 2006 | 6 صفحه PDF | دانلود رایگان |
This paper provides an overview of the current state-of-the-art in the formation of shallow junctions in germanium by ion implantation, covering the issues of dopant activation, diffusion and defect removal. As will be shown, for the case of p+ implantations, the application of rapid thermal annealing (RTA) to B implants yields good sheet resistance values, corresponding with activation levels well above the maximum solid solubility. A further improvement can be achieved by the use of a Ge pre-amorphization implant (PAI), which also removes the stable extended defects observed after high-dose B implantations. It will be shown that the formation of shallow n+ junctions is a more challenging field due to the rather low dopant solubilities and high diffusivities. However, encouraging results will be reported on the application of laser and flash-lamp annealing of P implantations in Ge. Also point-defect engineering is shown to be successful in controlling the junction formation.
Journal: Materials Science in Semiconductor Processing - Volume 9, Issues 4–5, August–October 2006, Pages 634–639