کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
729001 1461438 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thin epitaxial Si films as a passivation method for Ge(1 0 0): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Thin epitaxial Si films as a passivation method for Ge(1 0 0): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality
چکیده انگلیسی

Epitaxial fully strained Si films are known to form an effective passivation of the Ge(1 0 0) surface. However, we show using low-energy secondary ion mass spectrometry (SIMS) that considerable Ge surface segregation occurs for Si films grown from SiH4 at 500 °C. In this study, we develop an alternative deposition process at 350 °C using Si3H8 which significantly decreases the Ge peak at the Si surface. We attribute this strong reduction mainly to the fact that growth at 350 °C from trisilane proceeds below the Si–H desorption temperature. Charge pumping measurements on n-type Ge devices show a reduction by approximately a factor three in the high-k/substrate interface trap density for the samples with 350 °C Si passivation, compared to those using a Si passivation deposited at 500 °C.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 9, Issues 4–5, August–October 2006, Pages 679–684
نویسندگان
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