کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
729011 1461438 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Radiation damage in electron-irradiated strained Si n-MOSFETs
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Radiation damage in electron-irradiated strained Si n-MOSFETs
چکیده انگلیسی
Strain Silicon (sSi) layers on strain-relaxed SiGe buffer layers are frequently used in order to boost up the carrier mobility. Recently, fabrication techniques based on the use of ultra-thin (300-400 nm) SRB layers have been proposed. This study investigates the degradation of such sSi n-MOSFETs after 2-MeV electron irradiation. Owing to the electron irradiation, the drain current slightly increases and a negative shift of the threshold voltage is observed for an electron fluence of 1×1016 e/cm2. The channel electron mobility degradation is about 4%, as derived from the input characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 9, Issues 4–5, August–October 2006, Pages 732-736
نویسندگان
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