کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
729070 | 1461439 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of annealing atmospheres on the void defects in large-diameter CZSi single crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The influence of rapid thermal annealing (RTA) atmospheres on the flow pattern defects (FPDs) was studied in this paper. Ar, N2, N2/O2(9%), N2/O2(14%) and O2 were used as the atmosphere of RTA, respectively. The experimental results showed that the FPDs density on the wafers reduced after RTA process at 1195 °C for 5 min in every atmospheres, but the decrease of FPDs depends greatly on the annealing atmosphere. In N2/O2 mixed atmosphere, the FPDs density decreased with the increase of O2 percent in the N2/O2 mixed atmosphere and is the lowest in O2 atmosphere. In addition, the densities of FPDs after RTA decreased obviously on the surface and in the region of 20 μm depth from the surface as well. The influence mechanism of annealing atmospheres on the void annihilation was also discussed according to the behavior of the vacancies and interstitial atoms affected greatly by the atmosphere of RTA.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 9, Issues 1â3, FebruaryâJune 2006, Pages 117-120
Journal: Materials Science in Semiconductor Processing - Volume 9, Issues 1â3, FebruaryâJune 2006, Pages 117-120
نویسندگان
Caichi Liu, Qiuyan Hao, Jianqiang Zhang, Shilong Sun, Xiaoyun Teng, Yanqiao Zhao, Haizhi Sun, Qigang Zhou, Jing Wang,