کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
729198 1461416 2015 16 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
First principles study of structural, electronic and optical properties of indium gallium nitride arsenide lattice matched to gallium arsenide
ترجمه فارسی عنوان
اصول اول مطالعه خواص ساختاری، الکترونیک و اپتیکی نانوسیمهای گالیم نانورسیدی آرسینید همسان با آرسنید گالیم
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی

First principles calculations in the framework of the full-potential linearized augmented plane wave (FP-LAPW) scheme have been carried out. The dilute-nitride zinc blende (InxGa1−xNyAs1−y) was modeled at selected nitrogen compositions of y=3.125%, 6.25% and 9.375% lattice matched to gallium arsenide (GaAs). We pay attention to the InxGa1−xNyAs1−y alloy which can be perfectly lattice matched to the GaAs over its entire compositional range. In our study, this is achieved when a condition y~2.7x is maintained. The band structure calculations were performed with and without relaxation by using the generalized gradient approximation of Engel and Vosko (EV-GGA) as well as by the modified Becke–Johnson potential exchange (TB-mBJ). The action of the localized potential of subsisted nitrogen atoms was attributed to effect of relaxation. Increasing both indium and nitrogen compositions leads to decreasing energy band gap. In addition a band anti-crossing model (BAC) was also adopted to study the composition dependence of the direct band gap of quaternary alloys, building a bridge between their electronic and linear optical properties.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 30, February 2015, Pages 181–196
نویسندگان
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