Interfaces between γγ-Al2O3Al2O3 and silicon

As the epitaxy of crystalline LaAlO3 has not been realized yet, we investigated the use of a γγ-Al2O3Al2O3 buffer layer between the high-κκ and the substrate. We firstly studied the structural matching of γγ-Al2O3Al2O3(0 0 1) with a Si(0 0 1)-p(2×1)p(2×1) reconstructed surface. According to experimental data and computations in the density functional theory framework, we found stable interfaces between γγ-Al2O3Al2O3 and Si which encounters surface reconstruction changes. These interfaces satisfy the criterion of an insulating buffer layer.