کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
729417 892890 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structure analysis of the system Hafnium/Silicon(100) by means of X-ray photoelectron spectroscopy and X-ray photoelectron diffraction (XPD)
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Structure analysis of the system Hafnium/Silicon(100) by means of X-ray photoelectron spectroscopy and X-ray photoelectron diffraction (XPD)
چکیده انگلیسی

Due to the ongoing miniaturization of semiconductor devices new gate dielectrics are required for future applications. In this work we investigated hafnium silicide as a pre-system for hafnium oxide, one of the most promising candidates. One of the major problems of HfO2HfO2-films on silicon is the formation of hafnium silicide at the HfO2/SiHfO2/Si interface. Therefore, ultrathin films of the system HfSi on Si(100) with a systematic varied thickness from 3 to 30 Å were prepared. Measurements were conducted by means of X-ray photoelectron spectroscopy and low energy electron diffraction (LEED). Also full 2π2π X-ray photoelectron diffraction (XPD) patterns with high spectral resolution were recorded. Against other reports related to thicker films, several heating cycles showed no phase transitions of the ultrathin films. However, above temperatures of 630∘C an island formation is strongly indicated. The experimental XPD patterns are compared to simulated patterns of model structures. For the first time we present a modification of the C49 structure a possible structure for ultrathin HfSi2HfSi2-films on bulk Si. As an outlook possibilities for preparing the system HfO2/Si(100) are introduced.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 9, Issue 6, December 2006, Pages 1049–1054
نویسندگان
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