Hall measurements of n-indium arsenide MBE-deposited layers: Relevance to device processing and applications

This paper addresses the observed difference between the measured and theoretically computed concentration, resistivity and mobility for an n-InAs sample. This difference is a problem for measurements made during InAs device processing. The current literature does not provide a sufficient explanation of the problem, which appears only at temperatures lower than ~100 K. Nevertheless, it limits the use of semiconductor devices in new applications. We have previously suggested that the responsibility for such behavior may lie with an element, which functions as a donor at low temperatures and as an acceptor at higher temperatures.Another problem arises from using Hall potential measurements to obtain the concentration, mobility and resistivity of intentionally undoped n-InAs MBE layers. The experimental data show a dependence of the obtained results on the magnetic field strength. The experimental data agree with the computational values only at 0.6 T in the range of ~100–300 K. The purpose of this paper is to show how to obtain proper results for the conduction parameters of InAs using Hall voltage measurements.