Epitaxy of Si:C on Si(001) via methyldichlorosilane

Methyldichlorosilane (CH3SiHCl2) is compared to methylsilane (CH3SiH3) for vapor phase epitaxy of cubic silicon - carbon (NO :) (Si:C) alloys on Si (001). Parameters of interest are growth rate, percent carbon and crystallinity. Carbon incorporation efficiency and experimental window for epitaxial growth are similar for both precursors. The two precursors differ in Si contribution to the film growth rate.