کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
729526 | 892911 | 2012 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
InN and ln1−XGaX N: calculation of hall mobilities and effects of alloy disorder and dislocation scatterings
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Hall mobilities of InN and In1−xGaxN are calculated by an iterative method. All important scattering mechanisms are taken into account in these calculations. The effect of dislocation scattering on Hall mobility of InN at a carrier concentration of 10 1717 cm −3−3 is investigated in the temperature range of 30–600 K. Hall mobility of InN decreased with increasing dislocation density. Both dislocation and alloy disorder scatterings dependence on mobility in In1−xGaxN are examined as x (composition) varies from 0.0 to 1.0 at 77 K and 300 K. We observed that the Hall mobility of In1−xGaxN decreases up to x=0.3 at 300 K and up to x=0.5 at 77 K because of dislocation scattering.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 15, Issue 4, August 2012, Pages 347–352
Journal: Materials Science in Semiconductor Processing - Volume 15, Issue 4, August 2012, Pages 347–352
نویسندگان
Senem Aydogu, Mustafa Akarsu, Omer Ozbas,