کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
729532 892911 2012 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical properties and barrier modification of GaAs MIS Schottky device based on MEH-PPV organic interfacial layer
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Electrical properties and barrier modification of GaAs MIS Schottky device based on MEH-PPV organic interfacial layer
چکیده انگلیسی

We report fabrication and electrical characterization of GaAs based metal-interfacial layer-semiconductor (MIS) device with poly[2-methoxy-5-(2/-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), as an interfacial layer. MEH-PPV raises the barrier height in Al/MEH-PPV/p-GaAs MIS device as high as to 0.87 eV. A Capacitance-Voltage (C–V) characteristic exhibits a low hysteresis voltage with an interface states density of 1.69×1011 cm−2 eV−1. Moreover, a high transition frequency (fc) of about 50 kHz was observed in the accumulation mode. The photovoltaic response of Al/MEH-PPV/p-GaAs device was measured under the air masses (AM) 1.0 and 1.5. The open circuit voltage (VOC), short circuit current (ISC), fill factor and the efficiency of the Al/MEH-PPV/p-GaAs device were found to be 1.10 V, 0.52 mA, 0.65, and 5.92%, respectively, under AM 1.0 condition.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 15, Issue 4, August 2012, Pages 386–392
نویسندگان
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