A novel nanoscale MOSFET with modified buried layer for improving of AC performance and self-heating effect

In this paper, we propose a unique feature exhibited by novel nanoscale metal oxide semiconductor field effect transistors (MOSFETs) with an undoped buried region (UBR) under the channel and a buried oxide only under the source and drain region. The key idea in this work is suppression of the self-heating effect and gate–substrate capacitance improvement by modifying the buried layer. As a result, we demonstrate that the proposed structure called undoped buried region MOSFET (UBR-MOSFET) exhibits gate–substrate improvement in addition to excellent temperature performance when compared to conventional structures. Using two-dimensional and two-carrier device simulation, we have examined various design issues of the UBR-MOSFET and provided the reasons for the improved performance. The simulated results show that the novel structure is a suitable device for high temperature and electrical performances.