کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
729623 | 1461431 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved light extraction efficiency of GaN-based light emitting diodes using one and two interfaces of ITO/ZnO layer texturing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Light extraction efficiency of GaN-based light emitting diodes (LEDs) has improved significantly by using ITO/ZnO layer texturing. We have deliberately designed and successfully fabricated GaN-based LEDs having one and two interfaces of ITO/ZnO layer texturing in the device structure. It was found that the light extraction efficiencies of one and two interfaces of ITO/ZnO-layer texturing LEDs were 22.29% and 35.54% at 20 mA of current injection, respectively. Creating the chances of multiple light scattering at more than one interface is playing a major role to enhance light output power of the device. The source of the enhanced light output power is also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 13, Issues 5–6, 15 December 2010, Pages 329–332
Journal: Materials Science in Semiconductor Processing - Volume 13, Issues 5–6, 15 December 2010, Pages 329–332
نویسندگان
Periyayya Uthirakumar, Ji Hye Kang, Beo Deul Ryu, Chang-Hee Hong,