کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
729632 | 1461431 | 2010 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Systematic defect improvement integration of dual damascene processes development on nano semiconductor fabrication Systematic defect improvement integration of dual damascene processes development on nano semiconductor fabrication](/preview/png/729632.png)
Process defects of semiconductor wafer nanotechnology manufacturing process can often impact product yields, depending on the type, size, and location of the defect, as well as the design and yield sensitivity of the respective semiconductor product devices. Manufacturing process-induced defects prevention should begin with an assessment of the critical risks associated with the wafer fabrications. Systematic identification and classification approaches have been introduced to improve the process yield by defects sampling and images reviewing. This study presents comprehensive investigation of a process defects monitor and integration on semiconductor copper manufacturing process and technology, and module process integration of the problem of defects reduction on semiconductor manufacturing processes. Experiments on electrical devices were performed to identify the defect source and determine the mechanism of defect formation, and integrated manufacturing processes implemented to eliminate defect issues are also investigated.
Journal: Materials Science in Semiconductor Processing - Volume 13, Issues 5–6, 15 December 2010, Pages 376–382