Activation level in boron-doped thin germanium-on-insulator (GeOI): Extraction method and impact of mobility

We hereby present a non-destructive method for extracting the activation level on boron-doped germanium-on-insulator (GeOI) wafers, with a discussion on the impact of the hole mobility model. This method combines Monte Carlo boron profile simulations with optical Ge layer thickness TGe and electrical sheet resistance Rsh measurements. As B atoms are known not to diffuse in Ge for the usual activation temperatures (<800 °C), we can assume that the as-implanted dopant profile remains unchanged after annealing (no modelling of boron diffusion required). We highlight that the knowledge of the hole mobility dependence on activated impurities concentration in Ge is of paramount importance. Several experimental and theoretical models are available in the literature. After relative validity assessments, all of them have been implemented for extraction and unfortunately yield different values scattered over nearly one decade. Still, the lower-bound concentration 2.7×1019 cm−3 is in the range of the state-of-the-art values for B-implanted crystalline Ge and has proven suitable for functional GeOI pMOSFET demonstration.