GaAs thermal treatment with fullerenes

Fullerenes C60 were introduced into the GaAs crystal through the dislocation network by means of thermal diffusion. Energy level at 0.34-0.42 eV above the valence band was identified, which could be related to C60. Interaction between C60 vibration modes and GaAs Debye phonons was evidenced by the measurements of electric parameters. After the thermal treatment, electron mobility had diminished significantly as compared to pure GaAs crystals. This phenomenon was related to the changes in the EL2 level.