Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates

This paper studies the impact of the 45° substrate rotation on the low-frequency noise (LFN) of triple gate nFinFETs. The overall LFN has been extracted for both standard and 45° substrate rotated devices of several fin widths at different drain and gate voltage biases focusing on their operation in saturation regime. A general view of the mechanisms which govern the low-frequency noise in MOS devices is provided and a brief discussion on the physical origins of the LFN in the evaluated devices is carried out. It has been noted that the LFN in non-rotated (0° rotated) and 45° rotated devices operating in the linear regime shows 1/f behavior independent on the gate bias, whereas in the saturation regime both 1/f and Lorentzian (1/f2) noises are observed. The former one prevails at lower frequencies and the 1/f2 noise at higher ones. In this case, the corner frequency shows an exponential dependence on the gate bias.

► Low-frequency noise analysis of 0° and 45° substrate rotated FinFETs is carried out.
► Substrate rotation has not affected the 1/f noise.
► Substrate rotation provides degradation on the trap density of wider devices.
► Narrow rotated devices show lower trap density than the non-rotated ones.
► Quality of top interface and sidewalls seems to be influenced by substrate rotation.