کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747931 1462234 2014 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors
چکیده انگلیسی


• We extend commercial TCAD for semiconductors to simulate electronic biosensors.
• Screening at high electrolyte concentration strongly reduces their DC sensitivity.
• We analyze the relevance of steric and polarization effects in nano-electrodes sensors.

We present a simple approach to describe electrolytes in TCAD simulators for the modeling of nano-biosensors. The method exploits the similarity between the transport equations for electrons and holes in semiconductors and the ones for charged ions in a solution. We describe a few workarounds to improve the model accuracy in spite of the limitations of commercial TCAD. Applications to the simulations of silicon nanowire and nano-electrode biosensors are reported as relevant examples.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 98, August 2014, Pages 63–69
نویسندگان
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