کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748667 1462259 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide
چکیده انگلیسی

Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 106 cycling endurance are achieved in Ni/GeOx/Ta2O5−yNy/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta2O5−yNy for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents.


► Nitrogen-doped GeO/TaON RRAM shows low 0.6 pJ energy and good 106 endurance.
► Excellent uniformity is attributed to nitrogen-related defects in TaON for better hopping.
► Hopping conduction leads to fast 30 ns switching speed, low self-compliance set current.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 73, July 2012, Pages 60–63
نویسندگان
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