3D 'atomistic' simulations of dopant induced variability in nanoscale implant free In0.75Ga0.25As MOSFETs

► We use quantum-corrected DD simulations to study the variability in IF III-V MOSFETs. ► Quantum corrections (QCs) are introduced through the DG approach. ► We use an atomistic mesh to resolve the exact positions of the random dopants (RDs). ► We have investigated the RD induced variability in the Vt, Ioff, and SS of the device. ► QCs lead to a decrease in the Vt fluctuations when compared to the classical DD.